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Silicon Crystal Growth Furnace 1200

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Silicon crystal growth furnace is to melt silicon semiconductor materials by graphite resistance heater in an inert gas environment, using czochralski technique dislocation-free crystal growth equipment, it can produce high quality single crystal. Here are the parameters of silicon crystal growth furnace 1200.


Heat field

26 inch?28 inch

single crystal size

8 inch - 12 inch


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